A pMOS transistor was fabricated on an n-type substrate with a bulk doping density of N D = 10 16…

A pMOS transistor was fabricated on an n-type substrate with a bulk doping density of ND= 1016cm-3 , gate doping density (n-type poly) of ND= 1020 cm-3, Qox /q = 4.1010 cm-2, and gate oxide thickness of tox= 0.1 µm. Calculate the threshold voltage at room temperature for VSB= 0. Use εsi = 1 1.7ε0.